EVG Wafer Bonder

FOM Name:  FURN Wafer Bonder
Model:  E-Visions EV801
Contact: Kurt Kupcho (kakupcho@wisc.edu, 608-262-2982)
Center:  NFC
Location: Engineering Centers Building 3rd Floor Cleanroom

The EVG wafer bonding system is actually two separate units, one to perform wafer cleaning and one for bonding.  The EVG 301 wafer cleaning station has programmable steps for spin speed and DI water dispense with mega-sonic excitation.  The EVG 501 bonding unit has interchangeable chucks for 2-, 3-, and 4-inch wafers.  The bonding unit can be operated manually or with programmed processes to control the heating, cooling, electrode force, voltage, and bonding time.  Both the top and bottom heaters have a range up to 550ºC.  The electrode force is 1-7000 Newton depending on the bonding method used.  Voltage for anodic bonding is up to 1200 volts.  The EVG 501 bonding unit is good for direct bonding of Si-Si or for bonding Si-Glass (must have alkaline content) using anodic bonding (high voltage).

This instrument has material restrictions.  Consult the allowed materials list for this instrument in FOM.

This is an accordion element with a series of buttons that open and close related content panels.

Configuration

  • DI ultrasonic wafer cleaning system
  • For 15mm2, 2 inch, 3 inch, or 4 inch wafers

Limitations

  • Si-Si direct bonding
  • Si-Glass anodic bonding
  • 7000N of force