Heidelberg DWL 66+ laser writer lithography system

Contact: Quinn Leonard (qleonard@wisc.edu, 608-890-3030)
Instrument Center:  NFC
Instrument Location: Engineering Centers Building 3rd Floor

This is a state-of-the-art lithography system, using a scanning UV laser to pattern substrates. No photomask is required.

Funding for this tool was provided by the College of Engineering, the Electrical and Computer Engineering Department, the Vice Chancellor for Research and Graduate Education, and the Wisconsin Alumni Research Foundation.

This is an accordion element with a series of buttons that open and close related content panels.

Instrument Configuration

  • Diode laser compatible with standard optical photoresists
  • Standard write mode can pattern features down to one micron
  • High resolution write mode can pattern features down to 300 nm lines and spaces, in sufficiently thin resist
  • Accepts substrates of any shape (round or square preferred)
  • Accepts transparent or opaque substrates
  • Accepts substrates as small as 5 mm x 5 mm (larger substrates preferred)
  • Automatic focus via optical or pneumatic systems


  • Due to safety and contamination considerations, materials allowed in this tool are restricted. See the list of allowed materials in FOM.


  • The pattern conversion system can accept files in the GDSII, DXF, CIF, or BMP formats.
  • Substrates can be whole wafers up to 150 mm diameter or square plates up to 7″ on a side. Irregularly shaped substrates can also be patterned, as can smaller samples down to about 5 mm on a side.
  • The tool can work with opaque or transparent substrates.
  • The diode laser used for patterning is compatatible with standard optical photoresists.
  • The system is capable of greyscale patterning up to 128 grey levels.
  • Isolated lines as small as 300 nm
  • 1:1 lines and spaces as small as 500 nm
  • CD uniformity better than 75 nm 3 sigma
  • Alignment accuracy better than 500 nm over a 100 mm wafer
  • Alignment accuracy better than 350 nm over a 12 mm x 12 mm chip
  • 3 sigma line edge roughness better than 65 nm