FOM Name: ETCH ICP General Plasma Etcher
Make/Model: Plasma-Therm 790 ICP
Contact: Kurt Kupcho (kakupcho@wisc.edu, 608-262-2982)
Center: NFC
Location: Engineering Centers Building 3rd Floor Cleanroom
The Plasma-Therm 790 ICP Etch system is the only single chamber ICP etch system in Plasma Bay. The system has a 2MHz, 1000W inductively coupled coil used to increase and control the plasma density. The substrate is independently biased using a 13.56MHz, 500W power supply. The system’s computer controls the vacuum pumping cycles and the process parameters. The user can request a recipe for their etch process parameters, such as gas flow, pressure, and the setting of each power supply. The system is configured for 3-inch diameter wafers or smaller and uses a mechanical clamp to hold the sample on the RF chuck. Helium backside cooling is used to help keep the sample cool during the etch.
This instrument has material restrictions. Consult the allowed materials list for this instrument in FOM.
This is an accordion element with a series of buttons that open and close related content panels.
Configuration
- Process gases: Ar, O2, He, SF6, CF4, CHF3, and N2
- He backside cooling
- Water cooled sample electrode
- Turbo pump with backing mechanical pump
- Computer software controlled
Limitations
- 3” wafer diameter or smaller
- 1000W coil
- 500W platen
