FOM Name: ETCH ICP Metal Plasma Etcher
Make/Model: Plasma-Therm SLR-770I-8R-ICP
Contact: Kurt Kupcho (kakupcho@wisc.edu, 608-262-2982)
Center: NFC
Location: Engineering Centers Building 3rd Floor Cleanroom
The ICP Metal Plasma Etcher system is equipped with a load-lock to transport wafers into the etch chamber while keeping the chamber under vacuum. The system has a 2MHz, 1000W inductively coupled coil used to generate and control the plasma density. The substrate is independently biased using a 13.56MHz, 500W power supply. The system computer controls the transfer of wafers between the load lock and the process chamber, the vacuum pumping cycles, and the process parameters. The system is configured for a single 6-inch diameter wafer and uses an electrostatic clamp to hold the sample on the RF chuck. Helium backside cooling is used to help keep the sample cool during etching.
This instrument has material restrictions. Consult the allowed materials list for this instrument in FOM.
This is an accordion element with a series of buttons that open and close related content panels.
Configuration
- Process gases: O2, Ar, N2, He, SF6, CF4, Cl, and BCl3
- Inductive Coupled Plasma (ICP)
- Load-lock
- Electro-static chuck
- He backside cooling
- Plasma-Therm Cortex software controlled instrument
Limitations
- 6” wafers required – smaller samples must be put on a 6” wafer
- ICP 1000W
- Platen 500W
- Process pressure < 100mT
