FOM Name: ETCH STS Deep Reactive Ion Si Etcher
Make/Model: STS Multiplex ICP
Contact: Kurt Kupcho (kakupcho@wisc.edu, 608-262-2982)
Center: NFC
Location: Engineering Centers Building 3rd Floor Cleanroom
The STS Multiplex DRIE uses the Bosch process for etching silicon deep and anisotropic. In addition to the platen RF power supply for RIE the system also has an ICP RF source for independently controlling the plasma density from the DC Bias. The system uses a water cooled electrode and He backside flow to keep the sample cool. The system is designed to etch a 100 mm (4 in.) wafer. Bigger samples are not accepted and smaller samples must be mounted to a 4 in. wafer. The 4 in. wafer must pass a He leak up rate test to be processed.
This instrument has material restrictions. Consult the allowed materials list for this instrument in FOM.
This is an accordion element with a series of buttons that open and close related content panels.
Configuration
- Process gases: O2, Ar, SF6, and C4F8
- Inductive Coupled Plasma (ICP)
- Load-lock
- He backside cooling
- Software controlled instrument
- Bosch process
Limitations
- 4” wafers required – smaller samples must be put on a 4” wafer
- ICP 1000W
- Platen 300W
- He leak up rate test < 8mT/min
