The Nikon NSR-2005i8A utilizes a reticle that must meet Nikon’s reticle design guide specifications that is provided to the User. The wafer stage can accommodate wafers with diameters of 2”, 3”, or 4”. Smaller square or rectangular substrates require a fixed jig such as a wafer that has a mountable slot that has been milled out of the wafer substrate. Note that resolution might be hampered when using mountable fixtures. The 1750 Watt Hg lamp provides exposure irradiation in the i-line portion of the spectrum resulting in a resolution as small as 0.5um. The stage movement via laser interferometry and laser enhanced alignment schemes allow for a stepping repeatability of 70nm with an overlay accuracy of 3s £ 0.18 mm. The maximum chip exposure area is 21mm x 21mm when the entire reticle is exposed. The “blinding” capability of the Stepper allows for the exposure of designated parts of the reticle allowing for greater flexibility in pattern development.
This is an accordion element with a series of buttons that open and close related content panels.
- XHR electron optics (magnetic immersion lens type) with electrostatic scanning,and advanced SE detection
- An ultra-high brightness NG electron source
- Electron Beam Deceleration for improved low energy performance, access to ultra-low landing energies (down to 20 eV) and balanced topographic and material contrasts.
- An optional high-sensitivity, retractable solid-state backscattered detector (DBS)
- Complete suite of standard high-sensitivity detectors for superior detection of SE and BSE signals even at low landing energies, with the ability to acquire simultaneous SE and BSE images.
- ConstantPower™ design of electromagnetic lenses for ultimate stability, high controllability and reproducibility of the electron beam
- PFIB Ion Column for outstanding performance in high volume material removal and precision milling
- Integrated control of the MultiChem Gas Delivery System to deliver precise, repeatable doses to the sample as well as mix gas precursors prior to injection. At least one metal deposition precursor must be selected with up to an additional five selectable precursors optionally available, including up to two external gases.
- A high-precision, 5-axes eucentric specimen stage with 150 mm travel along the x and y axes.
- An integrated beam current measurement
- A high-resolution, 16-bit digital patterning engine capable of Simultaneous Pattern and Imaging (SPI™)
- An integrated Real Time Monitor (iRTM)
- Selective Etch Software to enable contrast selective milling
- A system architecture which is optimized for automation to support consistent EFI sample preparation or Slice and View applications
- Optional iFast™ Academic Science automation package enables engineers to quickly and easily create new recipes or modify existing recipes for use with the iFast Runner
- Designed for SEMI S2 and CE compliance
- Windows User Interface optimized for three 24” widescreen LCD monitors, allowing for up to four independent live images and a large image window
- Manual user interface and joystick for fast and intuitive microscope control