FOM Name: WET KOH Bath 1 and WET KOH Bath 2 – relaxed materials restrictions
Contact: Quinn Leonard (email@example.com, 608-890-3030)
Location: Engineering Centers Building 3rd Floor Cleanroom
KOH etching is a subtractive process.
Hot solutions of potassium hydroxide are commonly used to etch silicon. The process is highly directional, proceeding along crystal planes. It can be used in MEMS applications to create three-dimensional structures.
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There are two heated process tanks in the bench. Users can set temperatures up to 100 C. The bench is also equipped with a three-station cascade deionized water rinser.
One of the two tanks is restricted to dielectric materials only. The other has slightly more relaxed restrictions, allowing additional masking materials.