FOM name: DEP Dielectric Evaporator
Model: NFC fabricated
Contact: Kurt Kupcho, 608-262-2982
Center: NFC
Location: Engineering Centers Building 3rd Floor cleanroom
Deposition is an additive process.
The Dielectric Evaporator is a physical vapor deposition system that uses an electron beam as the heat source to melt materials for deposition of thin films on substrates.
Due to safety and contamination considerations, materials allowed in this tool are restricted. See the list of allowed materials in FOM.
This is an accordion element with a series of buttons that open and close related content panels.
Configuration
- Uses a Telemark focused electron beam hearth and power supply.
- High vacuum is achieved by a cryo-pump.
- The hearth holds four 15 cc crucibles for deposition material.
- A crystal oscillator is used to monitor the film thickness in-situ.
- A heater is available for substrate heating.
- Oxygen is available for depositing in an oxygen rich vacuum.
- A mounting platen that holds a single insert for a wafer or smaller samples.
- Source Material available:
| Silicon Oxide (SiO2) | ||
| Silicon Monoxide (SiO) | ||
| Aluminum Oxide (Al2O3)
Tantalum Pentoxide (Ta2O5) Titanium Oxide (TiO2) *Titanium (Ti) |
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| *Chrome (Cr)
*Silicon (Si) |
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*For adhesion layers only < 10nm
Limitations
- The system is for depositing non-toxic materials.
- Only dielectrics are allowed in the tool, no metals (except adhesion layer).
- Maximum film deposition thickness is 800 nm.
