CVC Sputter Deposition

FOM Name:  DEP CVC Sputterer
Make/Model:  NFC-modified CVC 601
Contact: Kurt Kupcho, 608-262-2982
Center: NFC
Location: Engineering Centers Building 3rd Floor Cleanroom

Sputter deposition is a type of physical vapor deposition, which is an additive process.

The CVC Sputter is a research grade sputter deposition system for non-toxic materials.  It is a multi-cathode system configured in sputter-up manner.

Due to safety and contamination considerations, materials allowed in this tool are restricted. See the list of allowed materials in FOM.

This is an accordion element with a series of buttons that open and close related content panels.


  • The system has two 6” DC magnetron target stations, one 3” RF station, and one 3” DC magnetron station.
  • Samples are mounted on a rotating table configured for 3” and 4” wafers.
  • Smaller samples can be mounted with adapter mounts or small fixtures.
  • High vacuum is achieved by a cryo-pump.
  • Argon and nitrogen are available as sputter gases. They can be mixed in any ratio desired.
  • Targets available:
Aluminum (Al) *Silicon Dioxide (SiO2)
Chromium (Cr) *ITO (In2O3+10%SnO2)
Al/Si/Cu *Zinc Oxide (ZnO)
Titanium (Ti)
Tungsten (W) *RF cathode only
Silver (Ag)
Nickel (Ni)




  • Maximum wafer sample size is 100mm. Whole wafers or substrate pieces are allowed.
  • Maximum film deposition thickness is 2um.
  • Power allowed to the targets is limited, based upon the material or bonding method.