Chemical vapor deposition (CVD) is a method for producing high quality solid materials, typically in the form of thin films.
CVD is usually carried out under vacuum and at elevated temperatures. The substrate to be coated is exposed to one or more volatile precursors, which react or decompose on the substrate surface to produce the desired deposit.
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Instrumentation Available
Key Attributes
- Selecting the species and flow rates of precursor gases allows precise control of film composition.
- Adjusting deposition time, temperature, and pressure allows precise control of film thickness and other film properties, such as stress.
Strengths
- Selecting the species and flow rates of precursor gases allows precise control of film composition.
- Adjusting deposition time, temperature, and pressure allows precise control of film thickness and other film properties, such as stress.
Limitations
- LPCVD processes take place at high temperatures, require exceptionally clean samples, and work best on whole, round wafers
- PECVD processes take place at moderately high temperatures
Applications
Additional Reading
